sti field oxide
WithitszerooxidefieldencroachmentSTIismoresuitablefortheincreaseddensityrequirements,becauseitallowstoformsmallerisolationregions.The ...,由KShiozawa著作·1999·被引用9次—WeconcludedthatSTI,inwhichtheoriginalfieldoxideabruptlyprojectsabovethesubstr...
Shallow-Trench Isolation With Raised-Field
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由CChen著作·2000·被引用4次—Thispaperdescribesanovelshallow-trenchisolation(STI)structuretosuppressthecornermetal-oxidesemiconductorfield-effecttransistor(MOSFET)inherent ...
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